Transition metal silicide and germanide nanoobjects have been studied for applications in microelectronics, thermoelectronics, optoelectronis, and spintronics. Their suitability for photovoltaic applications has not yet been investigated systematically. Nanoobjects of ternary transition metal silicide-germanides of M-Si-Ge composition (M = Cr, Mn, Fe, Co, Ni, Cu) will be prepared by the CVD method of various organometallic precursors. Electronic, magnetic, and photovoltaic properties of the nanobjects will be studied and correlated with their morphology and crystal structure determined by electron diffraction on single nanocrystals. Specific experimental conditions such as temperature, pressure, or duration, together with the precursor type will be tested to elucidate the driving force for the morphology changes and phase formations. To study the effect of Si-Ge substitution compounds with various Si/Ge ratios will be synthesized. Where possible, we will also prepare single crystals and compare them with the nanophases.